Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 220 A
Technical parameters/rated power: 500 W
Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 4.5 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 500 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 220 A
Technical parameters/rise time: 380 ns
Technical parameters/Input capacitance (Ciss): 31000pF @25V(Vds)
Technical parameters/rated power (Max): 500 W
Technical parameters/descent time: 300 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500W (Tc)
Encapsulation parameters/installation method: Screw
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: ISOTOP-4
External dimensions/length: 38.2 mm
External dimensions/width: 25.5 mm
External dimensions/height: 9.1 mm
External dimensions/packaging: ISOTOP-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFN170N10
|
IXYS Semiconductor | 功能相似 | SOT-227-4 |
IXYS SEMICONDUCTOR IXFN170N10 晶体管, MOSFET, N沟道, 170 A, 100 V, 10 mohm, 10 V, 4 V
|
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