Technical parameters/rated power: 600 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.01 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 600 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 170 A
Technical parameters/rise time: 90 ns
Technical parameters/Input capacitance (Ciss): 10300pF @25V(Vds)
Technical parameters/descent time: 79 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 600W (Tc)
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-227-4
External dimensions/length: 38.3 mm
External dimensions/width: 25.07 mm
External dimensions/height: 9.6 mm
External dimensions/packaging: SOT-227-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Lighting, Lighting, Power Management, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFN180N10
|
IXYS Semiconductor | 功能相似 | SOT-227-4 |
IXYS SEMICONDUCTOR IXFN180N10 晶体管, MOSFET, HiPerFET, N沟道, 180 A, 100 V, 8 mohm, 10 V, 4 V
|
||
STE250NS10
|
ST Microelectronics | 功能相似 | ISOTOP-4 |
STMICROELECTRONICS STE250NS10 晶体管, MOSFET, N沟道, 125 A, 100 V, 0.0045 ohm, 10 V, 3 V
|
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