Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 11.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 380 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1 kW
Technical parameters/input capacitance: 880 pF
Technical parameters/gate charge: 30.0 nC
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 6.70 A, 11.0 A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 940pF @50V(Vds)
Technical parameters/rated power (Max): 100 W
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 100W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD12NM50ND
|
ST Microelectronics | 类似代替 | TO-252-3 |
N沟道500 V， 0.29 Ω ， 11 A， FDmesh ？二功率MOSFET （具有快速二极管） ， D2PAK ， DPAK N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode), D2PAK, DPAK
|
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