Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.29 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 100 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 11A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 850pF @50V(Vds)
Technical parameters/rated power (Max): 100 W
Technical parameters/descent time: 17 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 100W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD12NM50N
|
ST Microelectronics | 类似代替 | TO-252-3 |
N沟道500 V， 0.29 Ω ， 11一个的MDmesh ？二功率MOSFET TO- 220 - DPAK - D2PAK - I2PAK - TO- 220FP N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review