Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.24 Ω
Technical parameters/drain source voltage (Vds): 600 V
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF21NM60ND
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STF21NM60ND 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review