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Model STF21NM60ND

Description STMICROELECTRONICS STF21NM60ND 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V

Brand: ST Microelectronics

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.17 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	30 W
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	600 V
Technical parameters/Continuous drain current (Ids):	17A
Technical parameters/rise time:	16 ns
Technical parameters/Input capacitance (Ciss):	1800pF @50V(Vds)
Technical parameters/rated power (Max):	30 W
Technical parameters/descent time:	48 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	30W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.4 mm
Dimensions/Width:	4.6 mm
Dimensions/Height:	16.4 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Other/Manufacturing Applications:	Industrial, Power Management, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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