Chip AI consultant
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 34.0 W |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Continuous drain current (Ids): | 21.0 A |
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Technical parameters/rise time: | 5 ns |
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Technical parameters/descent time: | 5 ns |
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Technical parameters/dissipated power (Max): | 34W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220 |
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Dimensions/Length: | 10.65 mm |
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Dimensions/Width: | 4.85 mm |
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Dimensions/Height: | 16.15 mm |
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Dimensions/Packaging: | TO-220 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Not Recommended |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs Information/Hong Kong Import and Export License: | NLR |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB15NM60ND
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 FDmesh™ 功率 MOSFET，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
||
STF21NM60ND
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STF21NM60ND 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
|
||
STF25NM60ND
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STF25NM60ND 功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
|
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