Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/reverse recovery time: 37 ns
Technical parameters/rated power (Max): 80 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HGTP7N60A4
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR HGTP7N60A4 单晶体管, IGBT, 34 A, 2.7 V, 125 W, 600 V, TO-220AB, 3 引脚
|
||
HGTP7N60A4
|
Freescale | 功能相似 | TO-220 |
FAIRCHILD SEMICONDUCTOR HGTP7N60A4 单晶体管, IGBT, 34 A, 2.7 V, 125 W, 600 V, TO-220AB, 3 引脚
|
||
HGTP7N60C3D
|
Intersil | 功能相似 |
FAIRCHILD SEMICONDUCTOR HGTP7N60C3D.. 单晶体管, IGBT, 14 A, 1.6 V, 60 W, 600 V, TO-220AB, 3 引脚
|
|||
HGTP7N60C3D
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR HGTP7N60C3D.. 单晶体管, IGBT, 14 A, 1.6 V, 60 W, 600 V, TO-220AB, 3 引脚
|
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