Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.8 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 110 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/Continuous drain current (Ids): 6A
Technical parameters/rise time: 14 ns
Technical parameters/Input capacitance (Ciss): 450pF @100V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 15.75 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD8N80K5
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
||
STU8N80K5
|
ST Microelectronics | 完全替代 | TO-251-3 |
N 通道 MDmesh™ K5 系列,SuperMESH5™, STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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