Technical parameters/number of channels: | 1 |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 950 mΩ |
|
Technical parameters/dissipated power: | 110 W |
|
Technical parameters/threshold voltage: | 4 V |
|
Technical parameters/drain source voltage (Vds): | 800 V |
|
Technical parameters/Leakage source breakdown voltage: | 800 V |
|
Technical parameters/rise time: | 14 ns |
|
Technical parameters/Input capacitance (Ciss): | 450pF @100V(Vds) |
|
Technical parameters/rated power (Max): | 110 W |
|
Technical parameters/descent time: | 20 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 110W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Length: | 6.6 mm |
|
Dimensions/Width: | 6.2 mm |
|
Dimensions/Height: | 2.4 mm |
|
Dimensions/Packaging: | TO-252-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP8N80K5
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
||
STU8N80K5
|
ST Microelectronics | 完全替代 | TO-251-3 |
N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review