Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 30W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 27A
Technical parameters/Input capacitance (Ciss): 475pF @25V(Vds)
Technical parameters/dissipated power (Max): 30W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STU75N3LLH6-S
|
ST Microelectronics | 类似代替 | TO-251-3 |
N沟道30 V , 0.0042 I© , 75 A, DPAK , TO- 220 , IPAK ,短IPAK N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220, IPAK, Short IPAK
|
||
STU7NM60N
|
ST Microelectronics | 功能相似 | TO-251-3 |
STMICROELECTRONICS STU7NM60N 功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V
|
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