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Model STU7NM60N
Description STMICROELECTRONICS STU7NM60N 功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V
Product QR code
Brand: ST Microelectronics
Packaging TO-251-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
1.06  yuan 1.06yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9059) Minimum order quantity(1)
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Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.84 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

45 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/Leakage source breakdown voltage:

600 V

 

Technical parameters/rise time:

10 ns

 

Technical parameters/Input capacitance (Ciss):

363pF @50V(Vds)

 

Technical parameters/rated power (Max):

45 W

 

Technical parameters/descent time:

12 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Technical parameters/dissipated power (Max):

45W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-251-3

 

Dimensions/Length:

6.6 mm

 

Dimensions/Width:

2.4 mm

 

Dimensions/Height:

6.9 mm

 

Dimensions/Packaging:

TO-251-3

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Industrial, Power Management, Industrial, Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STU27N3LH5 STU27N3LH5 ST Microelectronics 功能相似 TO-251-3
IPAK N-CH 30V 27A
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