Technical parameters/drain source resistance: 18.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 60.0 A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
M7P
|
Vishay Siliconix | 功能相似 | TO-220 |
TRANSISTOR 90 A, 75 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power
|
||
M7P
|
Mitsumi | 功能相似 |
TRANSISTOR 90 A, 75 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power
|
|||
SUP90N08-6M8P-E3
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 75V 90A TO220AB
|
|||
SUP90N08-6M8P-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET N-CH 75V 90A TO220AB
|
||
SUP90N08-7M7P-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET 75V 90A 208.3W 7.7mohm @ 10V
|
||
SUP90N08-7M7P-E3
|
Vishay Semiconductor | 功能相似 |
MOSFET 75V 90A 208.3W 7.7mohm @ 10V
|
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