Technical parameters/dissipated power: 3.75W (Ta), 208.3W (Tc)
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Input capacitance (Ciss): 4250pF @30V(Vds)
Technical parameters/dissipated power (Max): 3.75W (Ta), 208.3W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUP90N08-6M8P-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 75V 90A TO220AB
|
|||
SUP90N08-6M8P-E3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 75V 90A TO220AB
|
||
SUP90N08-7M7P-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET 75V 90A 208.3W 7.7mohm @ 10V
|
||
SUP90N08-7M7P-E3
|
Vishay Semiconductor | 功能相似 |
MOSFET 75V 90A 208.3W 7.7mohm @ 10V
|
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