Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 4660pF @50V(Vds)
Technical parameters/rated power (Max): 3.75 W
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3750 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF2807PBF
|
Infineon | 功能相似 | TO-220-3 |
INFINEON IRF2807PBF 晶体管, MOSFET, N沟道, 71 A, 75 V, 13 mohm, 10 V, 4 V
|
||
IRF2807PBF
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON IRF2807PBF 晶体管, MOSFET, N沟道, 71 A, 75 V, 13 mohm, 10 V, 4 V
|
||
IRFZ48VPBF
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON IRFZ48VPBF 晶体管, MOSFET, N沟道, 72 A, 60 V, 12 mohm, 10 V, 4 V
|
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