Technical parameters/digits: 16
Technical parameters/access time (Max): 110 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Package parameters/number of pins: 64
Encapsulation parameters/Encapsulation: BGA
External dimensions/packaging: BGA
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
S70GL02GS11FHI010
|
Cypress Semiconductor | 功能相似 | FBGA-64 |
串行 SPI NOR 闪存存储器,Cypress Semiconductor 高性能 低引脚计数四路 SPI(串行外围设备接口) ### 快闪存储器 闪存 IC 是非易失 RAM,必须按块写入/擦除。 它有限定的写入周期的次数,适用于不经常更改的程序存储。
|
||
S70GL02GS11FHI010
|
Spansion | 功能相似 | FBGA-64 |
串行 SPI NOR 闪存存储器,Cypress Semiconductor 高性能 低引脚计数四路 SPI(串行外围设备接口) ### 快闪存储器 闪存 IC 是非易失 RAM,必须按块写入/擦除。 它有限定的写入周期的次数,适用于不经常更改的程序存储。
|
||
|
|
Spansion | 功能相似 | LBGA |
NOR Flash Parallel 3V 2G-bit 256M/128M x 8Bit/16Bit 110ns 64Pin FBGA T/R
|
||
S70GL02GS11FHI013
|
Cypress Semiconductor | 功能相似 | BGA |
NOR Flash Parallel 3V 2G-bit 256M/128M x 8Bit/16Bit 110ns 64Pin FBGA T/R
|
||
S70GL02GS11FHI020
|
Spansion | 功能相似 | FBGA |
NOR Flash Parallel 3V/3.3V 2Gbit 256M/128M x 8Bit/16Bit 110ns 64Pin FBGA Tray
|
||
S70GL02GS12FHIV20
|
Cypress Semiconductor | 功能相似 | FBGA-64 |
S70GL02GS 系列 2Gb (256 M x 8/128 M x 16) 3.6V MirrorBit® 闪存 -FBGA-64
|
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