Technical parameters/power supply voltage (DC): | 2.70V (min) |
|
Technical parameters/power supply current: | 60 mA |
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Technical parameters/number of pins: | 64 |
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Technical parameters/digits: | 8, 16 |
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Technical parameters/access time: | 110 ns |
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Technical parameters/access time (Max): | 110 ns |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 2.7V ~ 3.6V |
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Technical parameters/power supply voltage (Max): | 3.6 V |
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Technical parameters/power supply voltage (Min): | 2.7 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 64 |
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Encapsulation parameters/Encapsulation: | FBGA-64 |
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Dimensions/Length: | 13 mm |
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Dimensions/Width: | 11 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | FBGA-64 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tray |
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Other/Manufacturing Applications: | Industrial, computer and computer peripherals, consumer electronics, communication and networking |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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S70GL02GS11FHI010
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Cypress Semiconductor | 完全替代 | FBGA-64 |
串行 SPI NOR 闪存存储器,Cypress Semiconductor 高性能 低引脚计数四路 SPI(串行外围设备接口) ### 快闪存储器 闪存 IC 是非易失 RAM,必须按块写入/擦除。 它有限定的写入周期的次数,适用于不经常更改的程序存储。
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S70GL02GS11FHI010
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Spansion | 完全替代 | FBGA-64 |
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||
S70GL02GS11FHI020
|
Spansion | 完全替代 | FBGA |
NOR Flash Parallel 3V/3.3V 2Gbit 256M/128M x 8Bit/16Bit 110ns 64Pin FBGA Tray
|
||
S70GL02GS12FHIV10
|
Cypress Semiconductor | 功能相似 | FBGA-64 |
NOR Flash Parallel 3V/3.3V 2G-bit 256M x 8/128M x 16 120ns 64Pin FBGA Tray
|
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