Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 21.0 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 298 W
Technical parameters/input capacitance: 3.75 nF
Technical parameters/gate charge: 150 nC
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 21.0 A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 3750pF @25V(Vds)
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 298000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW25NM60ND
|
ST Microelectronics | 功能相似 | TO-247-3 |
N 通道 FDmesh™ 功率 MOSFET,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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