Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/maximum allowable collector current: 0.5A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSD261CGTA
|
Fairchild | 功能相似 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Epitaxial Transistor
|
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