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Model KSD261CGTA

Description 双极晶体管 - 双极结型晶体管(BJT) NPN Epitaxial Transistor

Brand: Fairchild

Packaging TO-92-3

Delivery time

Packaging method Tape

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	20.0 V
Technical parameters/rated current:	500 mA
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	500 mW
Technical parameters/breakdown voltage (collector emitter):	20 V
Technical parameters/Maximum allowable collector current:	0.5A
Technical parameters/minimum current amplification factor (hFE):	120
Technical parameters/maximum current amplification factor (hFE):	400
Technical parameters/rated power (Max):	500 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	500 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-92-3
Dimensions/Length:	4.7 mm
Dimensions/Width:	3.93 mm
Dimensions/Height:	5.33 mm
Dimensions/Packaging:	TO-92-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

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KSD261CGTA	Fairchild	功能相似	TO-92-3	Trans GP BJT NPN 20V 0.5A 3Pin TO-92 Ammo	PDF
KSD261CGTA_NL	Fairchild	功能相似	TO-92	低频功率放大器 Low Frequency Power Amplifier	PDF
KSD261GTA	ON Semiconductor	类似代替		低频功率放大器 Low Frequency Power Amplifier
KSD261GTA	Fairchild	类似代替	TO-92-3	低频功率放大器 Low Frequency Power Amplifier	PDF