Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 166W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Technical parameters/rise time: 122 ns
Technical parameters/Input capacitance (Ciss): 4500pF @25V(Vds)
Technical parameters/descent time: 113 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 166W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTB5426NT4G
|
ON Semiconductor | 类似代替 | TO-263-3 |
ON SEMICONDUCTOR NTB5426NT4G 场效应管, MOSFET, N沟道, 60V, 130A, D2-PAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review