Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.006 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 215 W
Technical parameters/threshold voltage: 3.1 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 130 A
Technical parameters/rise time: 100 ns
Technical parameters/Input capacitance (Ciss): 5800pF @25V(Vds)
Technical parameters/rated power (Max): 215 W
Technical parameters/descent time: 95 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 215W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.29 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2016/06/20
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTB5411NT4G
|
ON Semiconductor | 类似代替 | TO-263-3 |
80A,60V功率MOSFET
|
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