Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 28 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 136 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 42.0 A
Technical parameters/rise time: 84 ns
Technical parameters/Input capacitance (Ciss): 1800pF @25V(Vds)
Technical parameters/rated power (Max): 136 W
Technical parameters/descent time: 71 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 136W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTB6413ANT4G
|
ON Semiconductor | 类似代替 | TO-263-3 |
N 通道功率 MOSFET，100V 至 1700V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
||
NVD6824NLT4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
N 通道功率 MOSFET，100V 至 1700V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
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