Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.0165 Ω |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 3.9 W |
|
Technical parameters/threshold voltage: | 2.5 V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/rise time: | 55 ns |
|
Technical parameters/Input capacitance (Ciss): | 3468pF @25V(Vds) |
|
Technical parameters/descent time: | 42 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 90 W |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.38 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTB6413ANG
|
ON Semiconductor | 功能相似 | TO-263-3 |
N沟道功率MOSFET的100 V， 42 A， 28毫欧 N-Channel Power MOSFET 100 V, 42 A, 28 mΩ
|
||
NTB6413ANT4G
|
ON Semiconductor | 功能相似 | TO-263-3 |
N 通道功率 MOSFET，100V 至 1700V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
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