Technical parameters/rated power: 1 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 6 Ω
Technical parameters/dissipated power: 1 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 240 V
Technical parameters/leakage source breakdown voltage: 240 V
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 125 pF
Technical parameters/descent time: 24 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.21 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Suptertex | 功能相似 |
TMOS FET Transistor
|
|||
VN2406L
|
Vishay Semiconductor | 功能相似 | TO-92 |
TMOS FET Transistor
|
||
VN2406L
|
ON Semiconductor | 功能相似 | TO-92 |
TMOS FET Transistor
|
||
VN2406L
|
Vishay Siliconix | 功能相似 | TO-92 |
TMOS FET Transistor
|
||
VN2406L
|
Freescale | 功能相似 |
TMOS FET Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review