Technical parameters/drain source resistance: 6.00 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 800 mW
Technical parameters/leakage source breakdown voltage: 240 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 180 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VN2406L-G
|
Microchip | 功能相似 | TO-92-3 |
晶体管, MOSFET, DMOS, N沟道, 190 mA, 240 V, 6 ohm, 10 V, 2 V
|
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