Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.076 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.25 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 565pF @15V(Vds)
Technical parameters/descent time: 7 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.25 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 3.1 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1.2 mm
External dimensions/packaging: SOT-23
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AP2319GN-HF-3TR
|
Advanced Power Electronics | 功能相似 | SOT-23 |
ADVANCED POWER ELECTRONICS CORP AP2319GN-HF-3TR 晶体管, MOSFET, P沟道, -3.1 A, -30 V, 0.097 ohm, -4.5 V, -1 V
|
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