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Model AP2319GN-HF-3TR
Description ADVANCED POWER ELECTRONICS CORP AP2319GN-HF-3TR 晶体管, MOSFET, P沟道, -3.1 A, -30 V, 0.097 ohm, -4.5 V, -1 V
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Brand: Advanced Power Electronics
Packaging SOT-23
Delivery time
Packaging method
Standard packaging quantity 1
1.12  yuan 1.12yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5352) Minimum order quantity(1)
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Technical parameters/rated power:

1.38 W

 

Technical parameters/drain source resistance:

0.097 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

1.38 W

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

3.1A

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23

 

Dimensions/Packaging:

SOT-23

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
TSM2307CX RFG TSM2307CX RFG Taiwan Semiconductor 功能相似 SOT-23
TAIWAN SEMICONDUCTOR TSM2307CX RFG 晶体管, MOSFET, P沟道, -3 A, -30 V, 0.076 ohm, -10 V, -3 V 新
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