Technical parameters/frequency: 10 MHz
Technical parameters/rated voltage (DC): 350 V
Technical parameters/rated current: 1.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 2 W
Technical parameters/gain bandwidth product: 10 MHz
Technical parameters/breakdown voltage (collector emitter): 350 V
Technical parameters/minimum current amplification factor (hFE): 30 @300mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 150
Technical parameters/rated power (Max): 2 W
Technical parameters/DC current gain (hFE): 150
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.83 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
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2N5884
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2N5884
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TIP48
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TIP49
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ST Microelectronics | 功能相似 | TO-220-3 |
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TIP49
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Rochester | 功能相似 | TO-220 |
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TIP49
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Rectron Semiconductor | 功能相似 | TO-220 |
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TIP49
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Central Semiconductor | 功能相似 | TO-220-3 |
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TIP49
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Fairchild | 功能相似 | TO-220-3 |
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