Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 1.00 A
Technical parameters/dissipated power: 40 W
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/minimum current amplification factor (hFE): 30 @300mA, 10V
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 9.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4906
|
ETC | 功能相似 |
Bipolar Transistors - BJT Power BJT
|
|||
|
2N4906
|
Central Semiconductor | 功能相似 | TO-3-2 |
Bipolar Transistors - BJT Power BJT
|
||
2N5884
|
Central Semiconductor | 功能相似 | TO-204 |
NTE ELECTRONICS 2N5884 TRANSISTOR PNP SILICON 80V, IC-25A TO-3 CASE HIGH POWER AMPLIFIER APPLICATIONS COMP TO 2N5886
|
||
|
|
Microsemi | 功能相似 | TO-3 |
NTE ELECTRONICS 2N5884 TRANSISTOR PNP SILICON 80V, IC-25A TO-3 CASE HIGH POWER AMPLIFIER APPLICATIONS COMP TO 2N5886
|
||
2N5884
|
SPC | 功能相似 | TO-3 |
NTE ELECTRONICS 2N5884 TRANSISTOR PNP SILICON 80V, IC-25A TO-3 CASE HIGH POWER AMPLIFIER APPLICATIONS COMP TO 2N5886
|
||
|
|
Microsemi | 功能相似 | TO-66 |
Bipolar Transistors - BJT PNP Transistor
|
||
|
2N5956
|
Central Semiconductor | 功能相似 | Tube |
Bipolar Transistors - BJT PNP Transistor
|
||
TIP48
|
Panasonic | 功能相似 |
FAIRCHILD SEMICONDUCTOR TIP48 单晶体管 双极, NPN, 300 V, 10 MHz, 2 W, 1 A, 30 hFE
|
|||
TIP48
|
Poinn | 功能相似 |
FAIRCHILD SEMICONDUCTOR TIP48 单晶体管 双极, NPN, 300 V, 10 MHz, 2 W, 1 A, 30 hFE
|
|||
TIP48
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR TIP48 单晶体管 双极, NPN, 300 V, 10 MHz, 2 W, 1 A, 30 hFE
|
||
TIP48
|
ST Microelectronics | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR TIP48 单晶体管 双极, NPN, 300 V, 10 MHz, 2 W, 1 A, 30 hFE
|
||
|
|
Inchange Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR TIP48 单晶体管 双极, NPN, 300 V, 10 MHz, 2 W, 1 A, 30 hFE
|
|||
|
|
NTE Electronics | 功能相似 |
FAIRCHILD SEMICONDUCTOR TIP48 单晶体管 双极, NPN, 300 V, 10 MHz, 2 W, 1 A, 30 hFE
|
|||
TIP48
|
Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR TIP48 单晶体管 双极, NPN, 300 V, 10 MHz, 2 W, 1 A, 30 hFE
|
||
TIP48
|
Central Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR TIP48 单晶体管 双极, NPN, 300 V, 10 MHz, 2 W, 1 A, 30 hFE
|
||
TIP48G
|
ON Semiconductor | 类似代替 | TO-220-3 |
TIP 系列 300 V 1 A NPN 通孔 硅 功率晶体管 - TO-220AB
|
||
TIP48TU
|
Fairchild | 功能相似 | TO-220-3 |
NPN 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
TIP48TU
|
ON Semiconductor | 功能相似 | TO-220-3 |
NPN 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
|
|
Inchange Semiconductor | 功能相似 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
|||
TIP49
|
ST Microelectronics | 功能相似 | TO-220-3 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
||
TIP49
|
Rochester | 功能相似 | TO-220 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
||
|
TIP49
|
Rectron Semiconductor | 功能相似 | TO-220 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
||
TIP49
|
Central Semiconductor | 功能相似 | TO-220-3 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
||
TIP49
|
Fairchild | 功能相似 | TO-220-3 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
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