Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 225 mA
Technical parameters/drain source resistance: 1.5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 440 mW
Technical parameters/threshold voltage: 1.3 V
Technical parameters/input capacitance: 11.0 pF
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 285 mA
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 11pF @10V(Vds)
Technical parameters/rated power (Max): 310 mW
Technical parameters/descent time: 55 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 310mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-723-3
External dimensions/packaging: SOT-723-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTK3043NT1G
|
ON Semiconductor | 类似代替 | SOT-723-3 |
ON SEMICONDUCTOR NTK3043NT1G. 场效应管, MOSFET, N沟道, 20V, 285mA, SOT-723
|
||
SSM3K35MFV
|
Toshiba | 功能相似 | SOT-723 |
SSM3K35MFV P沟道MOS场效应管 -20V 180mA 1.5ohm SOT-723 marking/标记 K2 高速开关 模拟开关 1.2V驱动 低导通电阻
|
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