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Model TK31A60W
Description TO-220SIS N-CH 600V 30.8A
Product QR code
Brand: Toshiba
Packaging SC-67
Delivery time
Packaging method
Standard packaging quantity 1
11.94  yuan 11.94yuan
5+:
$ 13.9663
50+:
$ 13.3694
200+:
$ 13.0352
500+:
$ 12.9516
1000+:
$ 12.8681
2500+:
$ 12.7726
5000+:
$ 12.7129
7500+:
$ 12.6532
Quantity
5+
50+
200+
500+
1000+
Price
$13.9663
$13.3694
$13.0352
$12.9516
$12.8681
Price $ 13.9663 $ 13.3694 $ 13.0352 $ 12.9516 $ 12.8681
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6818) Minimum order quantity(5)
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Technical parameters/polarity: N-CH

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 30.8A

Encapsulation parameters/Encapsulation: SC-67

External dimensions/packaging: SC-67

Other/Product Lifecycle: Active

Other/Manufacturing Applications: Switching Voltage Regulators

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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N 通道 MDmesh™ M5 系列，STMicroelectronics MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。 ### MOSFET 晶体管，STMicroelectronics
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STW35N65M5 STW35N65M5 ST Microelectronics 功能相似 TO-247-3
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STW38N65M5 STW38N65M5 ST Microelectronics 功能相似 TO-247-3
N 通道 MDmesh™ M5 系列，STMicroelectronics MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。 ### MOSFET 晶体管，STMicroelectronics
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