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Model STW35N65M5

Description N 通道 MDmesh™ M5 系列，STMicroelectronics MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。 ### MOSFET 晶体管，STMicroelectronics

Brand: ST Microelectronics

Packaging TO-247-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(2434) Minimum order quantity(1)

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Technical parameters/dissipated power:	160 W
Technical parameters/drain source voltage (Vds):	650 V
Technical parameters/rise time:	12 ns
Technical parameters/Input capacitance (Ciss):	3750pF @100V(Vds)
Technical parameters/rated power (Max):	160 W
Technical parameters/descent time:	16 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	160W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-247-3
Dimensions/Length:	15.75 mm
Dimensions/Width:	5.15 mm
Dimensions/Height:	20.15 mm
Dimensions/Packaging:	TO-247-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	STP35N65M5	ST Microelectronics	完全替代	TO-220-3	N 通道 MDmesh™ M5 系列，STMicroelectronics MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。 ### MOSFET 晶体管，STMicroelectronics	PDF
	STW38N65M5	ST Microelectronics	类似代替	TO-247-3	N 通道 MDmesh™ M5 系列，STMicroelectronics MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。 ### MOSFET 晶体管，STMicroelectronics	PDF