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Model STP35N65M5
Description N Channel MDmesh ™ M5 series, STMicroelectronics MDmesh M5 power MOSFET optimized for high-power PFC and PWM topologies. The main features include low-pass loss per silicon area and low gate charge per silicon wafer area. They are designed for energy-efficient, compact, and reliable hard switching applications such as solar converters, consumer product power supplies, and electronic lighting controls. ###MOSFET transistor, STMicroelectronics
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Brand: ST Microelectronics
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
32.12  yuan 32.12yuan
1+:
$ 39.1876
10+:
$ 36.9392
100+:
$ 35.2689
250+:
$ 35.0119
500+:
$ 34.7549
1000+:
$ 34.4658
2500+:
$ 34.2089
5000+:
$ 34.0483
Quantity
1+
10+
100+
250+
500+
Price
$39.1876
$36.9392
$35.2689
$35.0119
$34.7549
Price $ 39.1876 $ 36.9392 $ 35.2689 $ 35.0119 $ 34.7549
Start batch production 1+ 10+ 100+ 250+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9999) Minimum order quantity(1)
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Technical parameters/drain source resistance: 0.085 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 160 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/Continuous drain current (Ids): 27A

Technical parameters/rise time: 12 ns

Technical parameters/Input capacitance (Ciss): 3750pF @100V(Vds)

Technical parameters/rated power (Max): 160 W

Technical parameters/descent time: 16 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 160W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.4 mm

External dimensions/width: 4.6 mm

External dimensions/height: 15.75 mm

External dimensions/packaging: TO-220-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP38N65M5 STP38N65M5 ST Microelectronics 类似代替 TO-220-3
N 通道 MDmesh™ M5 系列，STMicroelectronics MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。 ### MOSFET 晶体管，STMicroelectronics
PDF
STW35N65M5 STW35N65M5 ST Microelectronics 完全替代 TO-247-3
N 通道 MDmesh™ M5 系列，STMicroelectronics MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。 ### MOSFET 晶体管，STMicroelectronics
PDF

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