Chip AI consultant
Technical parameters/output current: ≤80 mA
Technical parameters/power supply current: 290 µA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/dissipated power: 0.725 W
Technical parameters/common mode rejection ratio: 65 dB
Technical parameters/Input compensation drift: 6.00 µV/K
Technical parameters/bandwidth: 5.80 MHz
Technical parameters/conversion rate: 10.0 V/μs
Technical parameters/gain bandwidth product: 6.4 MHz
Technical parameters/input compensation voltage: 2.6 mV
Technical parameters/input bias current: 4 pA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 725 mW
Technical parameters/Common Mode Rejection Ratio (Min): 65 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TLE2161ACD
|
TI | 类似代替 | SOIC-8 |
神剑JFET输入高输出驱动MPOWER运算放大器 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS
|
||
TLE2161AIDR
|
TI | 类似代替 | SOIC-8 |
运算放大器 - 运放 Excalibur JFET-Input Hi-Out-Drive uPower
|
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