Technical parameters/output current: ≤80 mA
Technical parameters/power supply current: 290 µA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/dissipated power: 725 mW
Technical parameters/common mode rejection ratio: 65 dB
Technical parameters/Input compensation drift: 6.00 µV/K
Technical parameters/bandwidth: 5.80 MHz
Technical parameters/conversion rate: 10.0 V/μs
Technical parameters/gain bandwidth product: 5.8 MHz
Technical parameters/input compensation voltage: 500 µV
Technical parameters/input bias current: 4 pA
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/gain bandwidth: 6.4 MHz
Technical parameters/dissipated power (Max): 725 mW
Technical parameters/Common Mode Rejection Ratio (Min): 65 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TLE2161ACD
|
TI | 类似代替 | SOIC-8 |
神剑JFET输入高输出驱动MPOWER运算放大器 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS
|
||
TLE2161AIDG4
|
TI | 类似代替 | SOIC-8 |
Excalibur JFET 输入高输出驱动低功耗运算放大器 8-SOIC
|
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