Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -8.00 A
Technical parameters/drain source resistance: 0.035 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/product series: SI4435DY
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: -30.0 V
Technical parameters/Continuous drain current (Ids): -8.00 A
Technical parameters/rise time: 76.0 ns
Technical parameters/Input capacitance (Ciss): 2320pF @15V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
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IRF7101TRPBF
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International Rectifier | 类似代替 | SOIC-8 |
N 沟道 20 V 2 W 15 nC Hexfet 功率 MOSFET 表面贴装 - SOIC-8
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IRF7416PBF
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Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7416PBF. 晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
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IRF7416PBF
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International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7416PBF. 晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
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SI4435DYTRPBF
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International Rectifier | 类似代替 | SOIC-8 |
INFINEON SI4435DYTRPBF 晶体管, MOSFET, P沟道, -8 A, -30 V, 0.015 ohm, 10 V, -1 V 新
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