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Model SI7366DP-T1-E3
Description MOSFET N-CH 20V 13A PPAK SO-8
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Brand: Vishay Siliconix
Packaging SO-8
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2553) Minimum order quantity(1)
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Technical parameters/dissipated power: 1.7W (Ta)

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/dissipated power (Max): 1.7W (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-8

External dimensions/length: 6.15 mm

External dimensions/width: 5.15 mm

External dimensions/height: 1.04 mm

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7366DP-T1-GE3 SI7366DP-T1-GE3 VISHAY 完全替代 SO-8
MOSFET N-CH 20V 13A PPAK SO-8
PDF
SI7366DP-T1-GE3 SI7366DP-T1-GE3 Vishay Intertechnology 完全替代 SO-8
MOSFET N-CH 20V 13A PPAK SO-8
SIR424DP-T1-GE3 SIR424DP-T1-GE3 Vishay Semiconductor 类似代替 PowerPAKSO-8
SiR172DP Series N-Channel 20V 0.0074Ω 41.7W SMT Mosfet - PowerPAK® SO-8
PDF

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