Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.054 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.5 W
Technical parameters/rise time: 12 ns
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1212
External dimensions/length: 3.15 mm
External dimensions/height: 1.07 mm
External dimensions/packaging: 1212
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7415DN-T1-E3
|
VISHAY | 类似代替 | PowerPAK-1212-8 |
P通道60 -V （D -S ）的MOSFET P-Channel 60-V (D-S) MOSFET
|
||
SI7415DN-T1-E3
|
Vishay Semiconductor | 类似代替 | 1212 |
P通道60 -V （D -S ）的MOSFET P-Channel 60-V (D-S) MOSFET
|
||
|
|
Vishay Intertechnology | 类似代替 | PowerPAK-1212-8 |
P通道60 -V （D -S ）的MOSFET P-Channel 60-V (D-S) MOSFET
|
||
SI7415DN-T1-GE3
|
Vishay Siliconix | 完全替代 | 1212-8 |
VISHAY SI7415DN-T1-GE3 场效应管, MOSFET, P沟道, -60V, 5.7A, POWERPAK
|
||
SI7415DN-T1-GE3
|
VISHAY | 完全替代 | PowerPAK-1212-8 |
VISHAY SI7415DN-T1-GE3 场效应管, MOSFET, P沟道, -60V, 5.7A, POWERPAK
|
||
SI7415DN-T1-GE3
|
Vishay Semiconductor | 完全替代 | PowerPAK-1212-8 |
VISHAY SI7415DN-T1-GE3 场效应管, MOSFET, P沟道, -60V, 5.7A, POWERPAK
|
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