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Model SI7415DN-T1-E3

Description P通道60 -V （D -S ）的MOSFET P-Channel 60-V (D-S) MOSFET

Brand: VISHAY

Packaging PowerPAK-1212-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	54 mΩ
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	1.5 W
Technical parameters/threshold voltage:	3 V
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Continuous drain current (Ids):	3.6A
Technical parameters/rise time:	12 ns
Technical parameters/rated power (Max):	1.5 W
Technical parameters/descent time:	16 ns
Technical parameters/operating temperature (Max):	150 ℃
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	PowerPAK-1212-8
Dimensions/Packaging:	PowerPAK-1212-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Minimum Packaging:	3000
Other/Manufacturing Applications:	Power Management, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
SI7415DN-T1-E3	VISHAY	类似代替	PowerPAK-1212-8	P通道60 -V （D -S ）的MOSFET P-Channel 60-V (D-S) MOSFET	PDF
SI7415DN-T1-E3	Vishay Semiconductor	类似代替	1212	P通道60 -V （D -S ）的MOSFET P-Channel 60-V (D-S) MOSFET	PDF
SI7415DN-T1-E3	Vishay Intertechnology	类似代替	PowerPAK-1212-8	P通道60 -V （D -S ）的MOSFET P-Channel 60-V (D-S) MOSFET	PDF
SI7415DN-T1-GE3	Vishay Siliconix	完全替代	1212-8	VISHAY SI7415DN-T1-GE3 场效应管, MOSFET, P沟道, -60V, 5.7A, POWERPAK	PDF
SI7415DN-T1-GE3	VISHAY	完全替代	PowerPAK-1212-8	VISHAY SI7415DN-T1-GE3 场效应管, MOSFET, P沟道, -60V, 5.7A, POWERPAK	PDF
SI7415DN-T1-GE3	Vishay Semiconductor	完全替代	PowerPAK-1212-8	VISHAY SI7415DN-T1-GE3 场效应管, MOSFET, P沟道, -60V, 5.7A, POWERPAK	PDF