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Model SI7686DP-T1-GE3
Description VISHAY SI7686DP-T1-GE3 Field effect transistor, MOSFET, N-channel, 30V, 35A, SOIC
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.19  yuan 3.19yuan
5+:
$ 4.3065
25+:
$ 3.9875
50+:
$ 3.7642
100+:
$ 3.6685
500+:
$ 3.6047
2500+:
$ 3.5250
5000+:
$ 3.4931
10000+:
$ 3.4452
Quantity
5+
25+
50+
100+
500+
Price
$4.3065
$3.9875
$3.7642
$3.6685
$3.6047
Price $ 4.3065 $ 3.9875 $ 3.7642 $ 3.6685 $ 3.6047
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3870) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.014 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 5 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 35.0 A

Technical parameters/descent time: 8 ns

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIR472DP-T1-GE3 SIR472DP-T1-GE3 Vishay Siliconix 功能相似 SO-8
VISHAY SIR472DP-T1-GE3 场效应管, MOSFET, N沟道, 30V, 20A, SOIC
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