Technical parameters/rated power: 800 mW
Technical parameters/number of circuits: 2
Technical parameters/input current: 50 mA
Technical parameters/dissipated power: 800 mW
Technical parameters/input voltage (Max): 1.4 V
Technical parameters/input voltage (Min): 0.9 V
Technical parameters/output voltage (Max): 250 V
Technical parameters/output current (Max): 0.17 A
Technical parameters/input current (Min): 50 mA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/packaging: DIP-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TS117
|
IXYS Semiconductor | 类似代替 | DIP-8 |
TS117 系列 单刀单掷 120 mA 350 V 双通道 固态继电器 - DIP-8
|
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