Technical parameters/drain source resistance: 0.15 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 17A
Technical parameters/Input capacitance (Ciss): 1950pF @100V(Vds)
Technical parameters/rated power (Max): 125 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 125W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW20N65M5
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ST Microelectronics | 类似代替 | TO-247-3 |
N 通道 MDmesh™ M5 系列，STMicroelectronics MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。 ### MOSFET 晶体管，STMicroelectronics
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