Technical parameters/rated current: 1.40 A
Technical parameters/number of channels: 2
Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 170 mΩ
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 30V, 20V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 1.40 A, 1.00 A
Technical parameters/rise time: 6.00 ns
Technical parameters/Input capacitance (Ciss): 70pF @10V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/length: 2 mm
External dimensions/width: 1.7 mm
External dimensions/height: 0.77 mm
External dimensions/packaging: SOT-363-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
US6K2TR
|
ROHM Semiconductor | 功能相似 | SMD-6 |
30V,1.4A,双N沟道MOSFET
|
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