Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 1.40 A
Technical parameters/drain source resistance: 0.27 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/input capacitance: 70 pF
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 1.40 A
Technical parameters/rise time: 6 ns
Technical parameters/Input capacitance (Ciss): 70pF @10V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 8 ns
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SMD-6
External dimensions/packaging: SMD-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
US6M1TR
|
ROHM Semiconductor | 功能相似 | SOT-363-6 |
N-沟道 + P-沟道 2 W 30 V/-20 V 280 mOhm 表面贴装 4 + 2.5 V 驱动 MosFet -TUMT-6
|
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