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Model VB20120SG-E3/8W
Description High Voltage Trench MOS Barrier Schottky Rectifier
Product QR code
Brand: Vishay Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.2  yuan 5.2yuan
10+:
$ 6.2424
100+:
$ 5.9303
500+:
$ 5.7222
1000+:
$ 5.7118
2000+:
$ 5.6702
5000+:
$ 5.6182
7500+:
$ 5.5765
10000+:
$ 5.5557
Quantity
10+
100+
500+
1000+
2000+
Price
$6.2424
$5.9303
$5.7222
$5.7118
$5.6702
Price $ 6.2424 $ 5.9303 $ 5.7222 $ 5.7118 $ 5.6702
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1946) Minimum order quantity(10)
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Technical parameters/forward voltage: 1.33V @20A

Technical parameters/Maximum forward surge current (Ifsm): 150 A

Technical parameters/forward voltage (Max): 1.33V @20A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -40 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.45 mm

External dimensions/width: 9.14 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -40℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VB20120SG-E3/4W VB20120SG-E3/4W Vishay Semiconductor 完全替代 TO-263-3
高压Trench MOS势垒肖特基整流器超低VF = 0.54 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
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