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Model VB20120SG-E3/4W
Description High voltage Trench MOS barrier Schottky rectifier with ultra-low VF=0.54 V IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
Product QR code
Brand: Vishay Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
3.79  yuan 3.79yuan
5+:
$ 5.1206
25+:
$ 4.7413
50+:
$ 4.4757
100+:
$ 4.3620
500+:
$ 4.2861
2500+:
$ 4.1913
5000+:
$ 4.1533
10000+:
$ 4.0964
Quantity
5+
25+
50+
100+
500+
Price
$5.1206
$4.7413
$4.4757
$4.3620
$4.2861
Price $ 5.1206 $ 4.7413 $ 4.4757 $ 4.3620 $ 4.2861
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3157) Minimum order quantity(5)
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Technical parameters/forward voltage: 1.33V @20A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VB20120SG-E3/8W VB20120SG-E3/8W Vishay Semiconductor 完全替代 TO-263-3
高压Trench MOS势垒肖特基整流器 High-Voltage Trench MOS Barrier Schottky Rectifier
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