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Model VB20150SG-E3/8W
Description High Voltage Trench MOS Barrier Schottky Rectifier
Product QR code
Brand: Vishay Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
4  yuan 4yuan
5+:
$ 5.3946
25+:
$ 4.9950
50+:
$ 4.7153
100+:
$ 4.5954
500+:
$ 4.5155
2500+:
$ 4.4156
5000+:
$ 4.3756
10000+:
$ 4.3157
Quantity
5+
25+
50+
100+
500+
Price
$5.3946
$4.9950
$4.7153
$4.5954
$4.5155
Price $ 5.3946 $ 4.9950 $ 4.7153 $ 4.5954 $ 4.5155
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9211) Minimum order quantity(5)
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Technical parameters/forward voltage: 1.6V @20A

Technical parameters/Maximum forward surge current (Ifsm): 140 A

Technical parameters/forward voltage (Max): 1.6V @20A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/width: 9.14 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VB20150SG-E3/4W VB20150SG-E3/4W VISHAY 完全替代 TO-263-3
高压Trench MOS势垒肖特基整流器超低VF = 0.57 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A
PDF
VB20150SG-E3/4W VB20150SG-E3/4W Vishay Semiconductor 完全替代 TO-263-3
高压Trench MOS势垒肖特基整流器超低VF = 0.57 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A
PDF

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