Technical parameters/forward voltage: 1.6 V
Technical parameters/Maximum reverse voltage (Vrrm): 150 V
Technical parameters/forward current: 20 A
Technical parameters/Maximum forward surge current (Ifsm): 140 A
Technical parameters/forward voltage (Max): 1.6V @20A
Technical parameters/forward current (Max): 20 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VB20150SG-E3/8W
|
Vishay Semiconductor | 完全替代 | TO-263-3 |
高压Trench MOS势垒肖特基整流器 High-Voltage Trench MOS Barrier Schottky Rectifier
|
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