Technical parameters/forward voltage: 0.67 V
Technical parameters/Maximum reverse voltage (Vrrm): 80 V
Technical parameters/forward current: 20 A
Technical parameters/Maximum forward surge current (Ifsm): 100 A
Technical parameters/forward current (Max): 20 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 800
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VBT2080C-E3/4W
|
Vishay Semiconductor | 功能相似 | TO-263-3 |
双Trench MOS势垒肖特基整流器 Dual Trench MOS Barrier Schottky Rectifier
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